2SA673 datasheet(2/6 Pages) HITACHI

2 / 6 page

2SA673, 2SA673A

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

2SA673

2SA673A

Unit

Collector to base voltage

CBO

–35

–50

Collector to emitter voltage

CEO

–35

–50

Emitter to base voltage

EBO

–4

Collector current

–500

Collector power dissipation

400

Junction temperature

150

°C

Storage temperature

Tstg

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

2SA673

2SA673A

Item

Symbol

Min

Typ

Max

Min

Typ

Max

Unit

Test conditions

Collector to base

breakdown voltage

(BR)CBO

–35

—

–50

—

C = –10 µA, IE = 0

Collector to emitter

breakdown voltage

(BR)CEO

–35

—

–50

—

C = –1 mA, RBE = ∞

Emitter to base

breakdown voltage

(BR)EBO

–4

—

–4

—

E = –10 µA, IC = 0

Collector cutoff current

CBO

—

–0.5

—

–0.5

µAV

CB = –20 V, IE = 0

Collector to emitter

saturation voltage

CE(sat)

—

–0.2

–0.6

—

–0.2

–0.6

C = –150 mA,

B = –15 mA*

DC current trnsfer ratio

FE*

—

320

—

320

CE = –3 V,

C = –10 mA

DC current trnsfer ratio

—

CE = –3 V,

C = –500 mA*

Base to emitter voltage

—

–0.64 —

—

–0.64 —

CE = –3 V,

C =–10 mA

Notes: 1. The 2SA673 and 2SA673A are grouped by h

FE as follows.

2. Pulse test

60 to 120

100 to 200

160 to 320

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