2SA778 datasheet(2/8 Pages) HITACHI

2 / 8 page

2SA778(K), 2SA778A(K)

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

2SA778(K)

2SA778A(K)

Unit

Collector to base voltage

CBO

–150

–180

Collector to emitter voltage

CEO

–150

–180

Emitter to base voltage

EBO

–5

Collector current

–50

Collector power dissipation

200

Junction temperature

150

°C

Storage temperature

Tstg

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

2SA778(K)

2SA778A(K)

Item

Symbol

Min

Typ

Max

Min

Typ

Max

Unit

Test conditions

Collector to base

breakdown voltage

(BR)CBO

–150 —

—

–180

—

C = –50 µA, IE = 0

Collector to emitter

breakdown voltage

(BR)CER

–150 —

—

–180

—

C = –50 µA,

BE = 30 kΩ

Collector cutoff current

CBO

—

–1.0

—

µAV

CB = –100 V, IE = 0

—

–1.0

µAV

CB = –150 V, IE = 0

Emitter cutoff current

EBO

—

–1.0

—

–1.0

µAV

EB = –5 V, IC = 0

DC current transfer ratio h

100

—

100

200

CE = –3 V,

E = –15 mA

Collector to emitter

saturation voltage

CE(sat)

—

–0.3

–1.0

—

–0.3

–1.0

C = –15 mA,

B = –1 mA

Base to emitter

saturation voltage

BE(sat)

—

–0.77 –1.0

—

–0.77 –1.0

C = –15 mA,

B = –1 mA

Collector output

capacitance

Cob

—

CB = –10 V, IE = 0,

f = 1 MHz

Gain bandwidth product f

—

MHz

CE = –3 V,

C = –15 mA

Turn on time

—

135

—

135

—

CC = –10.3 V

Turn off time

off

—

1.7

—

1.7

—

µsI

C = 10 IB1 = –10

B2 = –10 mA

Storage time

stg

—

1.0

—

1.0

µsV

CC = –10 V,

C =–17 mA

B1 = –1mA,

B2 = –12 mA

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