2SA844 datasheet(2/5 Pages) HITACHI

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2SA844

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Collector to base voltage

CBO

–55

Collector to emitter voltage

CEO

–55

Emitter to base voltage

EBO

–5

Collector current

–100

Emitter current

100

Collector power dissipation

300

Junction temperature

150

°C

Storage temperature

Tstg

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to base breakdown

voltage

(BR)CBO

–55

—

C = –10 µA, IE = 0

Collector to emitter breakdown

voltage

(BR)CEO

–55

—

C = –1 mA, RBE = ∞

Emitter to base breakdown

voltage

(BR)EBO

–5

—

E = –10 µA, IC = 0

Collector cutoff current

CBO

—

–100

CB = –18 V, IE = 0

Emitter cutoff current

EBO

—

–50

EB = –2 V, IC = 0

DC current transfer ratio

FE*

160

—

800

CE = –12 V, IC = –2 mA

Collector to emitter saturation

voltage

CE(sat)

—

–0.1

–0.5

C = –10 mA, IB = –1 mA

Base to emitter voltage

—

–0.66

–0.75

CE = –12 V, IC = –2 mA

Gain bandwidth product

—

200

—

MHz

CE = –12 V, IE = –2 mA

Collector output capacitance

Cob

—

2.0

—

CB = –10 V, IE = 0, f = 1 MHz

Note:

1. The 2SA844 is grouped by h

FE as follows.

160 to 320

250 to 500

400 to 800

See characteristic curves of 2SA836.

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