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2SA893 Datasheet(PDF) 2 Page - Hitachi Semiconductor

Part # 2SA893
Description  Silicon PNP Epitaxial
PDF  5 Pages
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Manufacturer  HITACHI [Hitachi Semiconductor]
Direct Link  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

2SA893 Datasheet(HTML) 2 Page - Hitachi Semiconductor

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2SA893, 2SA893A
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
2SA893
2SA893A
Unit
Collector to base voltage
V
CBO
–90
–120
V
Collector to emitter voltage
V
CEO
–90
–120
V
Emitter to base voltage
V
EBO
–5
–5
V
Collector current
I
C
–50
–50
mA
Collector power dissipation
P
C
300
300
mW
Junction temperature
Tj
150
150
°C
Storage temperature
Tstg
–55 to +150
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
2SA893
2SA893A
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to emitter
breakdown voltage
V
(BR)CEO
–90
—
—
–120
—
—
V
I
C = –1 mA, RBE = ∞
Collector cutoff current
I
CBO
—
—
–0.5
—
—
—
µAV
CB = –75 V, IE = 0
—
—
—
—
—
–0.5
µAV
CB = –100 V, IE = 0
DC current transfer ratio h
FE*
1
250
—
800
250
—
800
V
CE = –12 V,
I
C = –2 mA
Base to emitter voltage
V
BE
—
—
–0.75 —
—
–0.75 V
V
CE = –12 V,
I
C = –2 mA
Collector to emitter
saturation voltage
V
CE(sat)
—
—
–0.5
—
—
–0.5
V
I
C = –10 mA,
I
B = –1 mA
Gain bandwidth product f
T
—
120
—
—
120
—
MHz
V
CE = –12 V,
I
C = –2 mA
Collector output
capacitance
Cob
—
1.8
—
—
1.8
—
pF
V
CB = –25 V, IE = 0,
f = 1 MHz
Noise figure
NF
—
2
10
—
2
10
dB
V
CE = –6 V,
I
C = –50 µA
R
g = 50 kΩ, f = 1 kHz
Note:
1. The 2SA893/A is grouped by h
FE as follows.
DE
250 to 500
400 to 800
See characteristic curves of 2SA872 and 2SA872A



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