2SC1162 datasheet(2/5 Pages) HITACHI

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2SC1162

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to base breakdown

voltage

(BR)CBO

—

C = 1 mA, IE = 0

Collector to emitter breakdown

voltage

(BR)CEO

—

C = 10 mA, RBE = ∞

Emitter to base breakdown

voltage

(BR)EBO

5—

—

E = 1 mA, IC = 0

Collector cutoff current

CBO

——

µAV

CB = 35 V, IE = 0

DC current transfer ratio

FE*

—

320

CE = 2 V, IC = 0.5 A

—

CE = 2 V, IC = 1.5 A

(pulse test)

Base to emitter voltage

—

0.93

1.5

CE = 2 V, IC = 1.5 A

(pulse test)

Collector to emitter saturation

voltage

CE(sat)

—

0.5

1.0

C = 2 A, IB = 0.2 A (pulse test)

Gain bandwidth product

—

180

—

MHz

CE = 2 V, IC = 0.2 A

Note:

1. The 2SC1162 is grouped by h

FE as follows.

60 to 120

100 to 200

160 to 320

0.8

0.6

0.4

0.2

100

150

200

Ambient temperature Ta (

°C)

Maximum Collector Dissipation Curve

0.75

0.5

0.1

520

Collector to emitter voltage VCE (V)

Area of Safe Operation

1.0

0.2

IC(max)(DC Operation)

TC = 25°C

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