2SC2853 datasheet(2/5 Pages) HITACHI

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2SC2853, 2SC2854

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

2SC2853

2SC2854

Unit

Collector to base voltage

CBO

120

Collector to emitter voltage

CEO

120

Emitter to base voltage

EBO

55V

Collector current

100

Emitter current

–100

Collector power dissipation

400

Junction temperature

150

°C

Storage temperature

Tstg

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

2SC2853

2SC2854

Item

Symbol Min

Typ

Max

Min

Typ

Max Unit

Test conditions

Collector to base

breakdown voltage

(BR)CBO

—

120

—

C = 10 µA, IE = 0

Collector to emitter

breakdown voltage

(BR)CEO

—

120

—

C = 1 mA, RBE = ∞

Emitter to base breakdown

voltage

(BR)EBO

—

—5

——

E = 10 µA, IC = 0

Collector cutoff current

CBO

—

0.1

—

0.1

µAV

CB = 70 V, IE = 0

Emitter cutoff current

EBO

—

0.1

—

0.1

µAV

EB = 2 V, IC = 0

DC current transfer ratio

FE*

250

—

800

250

—

800

CE = 12 V, IC = 2 mA*

Collector to emitter

saturation voltage

CE(sat)

—

0.05 0.10

—

0.05

0.10 V

C = 10 mA, IB = 1 mA*

Base to emitter saturation

voltage

BE(sat)

—

0.7

1.0

—

0.7

1.0

Gain bandwidth product

—

310

—

310

—

MHz V

CE = 6 V, IC = 10 mA

Collector output capacitance Cob

—

CB = 10 V, IE = 0,

f = 1 MHz

Notes: 1. The 2SC2853 and 2SC2854 are grouped by h

FE as follows.

2. Pulse test

250 to 500

400 to 800

See characteristic curves of 2SC2855 and 2SC2856.

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