2SC4197 datasheet(2/10 Pages) HITACHI

2 / 10 page

2SC4197

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Collector to base voltage

CBO

Collector to emitter voltage

CEO

Emitter to base voltage

EBO

Collector current

Collector power dissipation

150

Junction temperature

150

°C

Storage temperature

Tstg

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to base breakdown

voltage

(BR)CBO

——V

C = 10 µA, IE = 0

Collector cutoff current

CBO

—

0.1

µAV

CB = 15 V, IE = 0

Collector cutoff current

CEO

——

µAV

CE = 13 V, RBE = ∞

Emitter cutoff current

EBO

—

0.3

µAV

EB = 3 V, IC = 0

Collector to emitter saturation

voltage

CE(sat)

—

0.3

C = 20 mA, IB = 4 mA

DC current transfer ratio

—

180

CE = 5 V, IC = 5 mA

Collector output capacitance

Cob

—

0.85

1.3

CB = 10 V, IE = 0, f = 1MHz

Gain bandwidth product

3.0

3.8

—

GHz

CE = 5 V, IC = 20 mA

Conversion gain

—

CC = 5 V, IC = 0.8 mA,

in = 900 MHz

Noise figure

—

osc = 930 MHz (–5dBm),

out = 30 MHz

Note:

Marking is “TI–”.

2SC4197 Datasheet(PDF) 2 Page - Hitachi Semiconductor

2SC4197 Datasheet(HTML) 2 Page - Hitachi Semiconductor

Html Pages

1 2 3 4 5 6 7 8 9 10

Datasheet Download

Link URL