STB21NK50Z datasheet(3/13 Pages) STMICROELECTRONICS

Part #	STB21NK50Z

Description	N-channel 500 V, 0.23 Ω, 17 A, D2PAK Zener-protected superMESH™ Power MOSFET

PDF	13 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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3 / 13 page

STB21NK50Z

Electrical ratings

3/13

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage (VGS = 0)

500

VGS

Gate-source voltage

± 30

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC=100 °C

10.71

IDM

(1)

Pulse width limited by safe operating area

Drain current (pulsed)

PTOT

Total dissipation at TC = 25 °C

190

Derating Factor

1.51

W/°C

Vesd(G-S)

G-S ESD (HBM C=100 pF, R=1.5 k

Ω)

6000

dv/dt(2)

ISD ≤ 17 A, di/dt ≤ 200 A/µs,VDD ≤ V(BR)DSS, TJ ≤ TJMAX

Peak diode recovery voltage slope

4.5

V/ns

Tstg

Storage temperature

-55 to 150

°C

Max operating junction temperature

150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case max

0.66

°C/W

Rthj-amb

Thermal resistance junction-ambient max

62.5

°C/W

Maximum lead temperature for soldering

purpose

300

°C

Table 4.

Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj Max)

EAS

Single pulse avalanche energy

(starting TJ=25 °C, ID=IAR, VDD=50 V)

850

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