2SC4829 datasheet(2/6 Pages) HITACHI

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2SC4829

Ordering Information

2SC4829B

60 to 120

2SC4829C

100 to 200

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Collector to base voltage

CBO

100

Collector to emitter voltage

CEO

100

Emitter to base voltage

EBO

Collector current

0.2

Collector peak current

C (peak)

0.5

Collector power dissipation

0.9

Junction temperature

150

°C

Storage temperature

Tstg

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to base breakdown

voltage

(BR)CBO

100

—

C = 10 µA, IE = 0

Collector to emitter breakdown

voltage

(BR)CEO

100

—

C = 1 mA, RBE = ∞

Emitter cutoff current

EBO

——

µAV

EB = 3 V, IC = 0

Collector cutoff current

CBO

—

1.0

µAV

CB = 80 V, IE = 0

DC current

transfer ratio

2SC4829B

—

120

CE = 10 V, IC = 10 mA

2SC4829C

100

—

200

Base to emitter voltage

—

1.0

CE = 10 V, IC = 10 mA

Collector to emitter saturation

voltage

CE(sat)

—

1.0

C = 100 mA, IB = 10 mA

Gain bandwidth product

800

1100

—

MHz

CE = 10 V, IE = 100 mA

Collector output capacitance

Cob

—

4.2

6.0

CB = 30 V, IE = 0, f = 1 MHz

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