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2SD1609 Datasheet(PDF) 3 Page - Hitachi Semiconductor |
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2SD1609 Datasheet(HTML) 3 Page - Hitachi Semiconductor |
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3 / 6 page ![]() 2SD1609, 2SD1610 3 100 50 20 10 5 2 1 0 0.2 0.4 Base to emitter voltage VBE (V) 0.6 1.0 0.8 Typical Transfer Characteristics VCE = 5 V 500 200 100 50 20 10 5 1 2 20 100 10 50 5 Collector current IC (mA) VCE = 5 V Pulse DC Current Transfer Ratio vs. Collector Current Ta = 75 °C 25 –25 Saturation Voltage vs. Collector Current IC = 10 IB Pulse 5 2 1.0 0.5 0.2 0.1 0.05 12 10 Collector current IC (mA) 550 20 100 VBE(sat) VCE(sat) Ta = –25°C Ta = –25 °C 25 75 75 25 Gain Bandwidth Product vs. Collector Current 500 200 100 50 20 10 5 1.0 0.5 2 Collector current IC (mA) 20 10 50 5 VCE = 10 V |
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