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2SD669 Datasheet(PDF) 2 Page - Hitachi Semiconductor |
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2SD669 Datasheet(HTML) 2 Page - Hitachi Semiconductor |
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2 / 7 page ![]() 2SD669, 2SD669A 2 Absolute Maximum Ratings (Ta = 25°C) Ratings Item Symbol 2SD669 2SD669A Unit Collector to base voltage V CBO 180 180 V Collector to emitter voltage V CEO 120 160 V Emitter to base voltage V EBO 55V Collector current I C 1.5 1.5 A Collector peak current I C(peak) 33A Collector power dissipation P C 11W P C* 1 20 20 W Junction temperature Tj 150 150 °C Storage temperature Tstg –55 to +150 –55 to +150 °C Note: 1. Value at T C = 25°C. |
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