2SD974 datasheet(2/6 Pages) HITACHI

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2SD974

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Collector to base voltage

CBO

120

Collector to emitter voltage

CEO

Emitter to base voltage

EBO

Collector current

Collector peak current

C(peak)

1.5

Surge collector current

C(surge)

Collector power dissipation

0.9

Junction temperature

150

°C

Storage temperature

Tstg

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to base breakdown

voltage

(BR)CBO

120

—

C = 10 µA, IE = 0

Collector to emitter breakdown

voltage

(BR)CEO

—

C = 1 mA, RBE = ∞

Emitter to base breakdown

voltage

(BR)EBO

5—

—

E = 10 µA, IC = 0

Collector cutoff current

CBO

—

1.0

µAV

CB = 100 V, IE = 0

DC current transfer ratio

150

—

CE = 5 V, IC = 1 A*

Collector to emitter saturation

voltage

CE(sat)

—

0.3

C = 1 A, IB = 0.05 A*

Base to emitter saturation

voltage

BE(sat)

—

1.2

MHz

Fall time

—

0.4

—

CP = 1 A, IB1 = –IB2 = 50 mA*

Note:

1. Pulse test

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