2SD975 datasheet(2/6 Pages) HITACHI

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2SD975

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to base breakdown

voltage

(BR)CBO

150

—

C = 1 mA, IE = 0

Collector to emitter breakdown

voltage

(BR)CEO

—

C = 10 mA, RBE = ∞

Emitter to base breakdown

voltage

(BR)EBO

——V

E = 1 mA, IC = 0

Collector cutoff current

CBO

—

1.0

µAV

CB = 100 V, IE = 0

DC current transfer ratio

150

—

CE = 5 V, IC = 1.5 A*

Collector to emitter saturation

voltage

CE(sat)

—

0.5

C = 1.5 A, IB = 0.05 A*

Base to emitter saturation

voltage

BE(sat)

—

1.3

Fall time

—

0.6

µsI

C = 1.5 A, IB1 = –IB2 = 50 mA

Note:

1. Pulse test.

Maximum Collector Dissipation

Curve

1.2

0.8

0.4

100

150

Ambient temperature Ta (

°C)

Area of Safe Operation

100

150

Collector to emitter voltage VCE (V)

(60 V, 0.5 A)

(20 V, 5 A)

TC = 25°C

f = 15.75 kHz

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