Click To Buy

Demo (http://www.verypdf.com)

Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or

other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.

FEATURES 

Improved Direct Replacement for SILICONIX & NATIONAL 2N5564 

HIGH GAIN 

7500µmho MINIMUM 

LOW “ON” RESISTANCE 

100Ω MAXIMUM 

ABSOLUTE MAXIMUM RATINGS 

@ 25°C (unless otherwise noted) 

Maximum Temperatures 

Storage Temperature ‐65°C to +200°C 

Operating Junction Temperature ‐55°C to +125°C 

Maximum Power Dissipation 

Device Dissipation (Each transistor) 

325mW 

Continuous Power Dissipation (Total) 

650mW 

Maximum Currents 

Gate Current 

50mA 

Maximum Voltages 

Gate to Drain ‐40V 

Gate to Source ‐40V 

Gate to Gate 

±80V 

  

  

MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated) 

SYMBOL 

CHARACTERISTIC 

MIN 

TYP 

MAX 

UNITS 

CONDITIONS 

Differential Gate to Source Cutoff Voltage 

‐‐ 

‐‐ 

5 

mV 

 

Differential Gate to Source Cutoff  

Voltage Change with Temperature 

‐‐ 

‐‐ 

10 

µV/°C 

TA = ‐55°C to +125°C 

 

Gate to Source Saturation Current Ratio 

0.95 

‐‐ 

1 

% 

Differential Gate Current 

‐‐ 

‐‐ 

20 

nA 

TA = +125°C  

 

Forward Transconductance Ratio

0.95 

‐‐ 

1 

% 

 

ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL 

CHARACTERISTICS 

MIN. 

TYP. 

MAX. 

UNITS 

CONDITIONS 

Gate to Source Breakdown Voltage ‐40 

‐‐ 

 

 

V 

 

Gate to Source Cutoff Voltage ‐0.5 

‐‐ 

‐3 

Gate to Source Forward Voltage 

‐‐ 

‐‐ 

1 

Gate to Source Saturation Current

5 

‐‐ 

30 

mA 

Gate Leakage Current

‐‐ 

‐‐ 

‐200 

nA 

Forward Transconductance 

7500 

‐‐ 

12500  

µS 

 

7000 

‐‐ 

‐‐ 

Output Conductance 

‐‐ 

‐‐ 

45 

Input Capacitance 

‐‐ 

‐‐ 

5 

pF 

 

Reverse Transfer Capacitance 

‐‐ 

‐‐ 

12 

NF 

Noise Figure 

‐‐ 

‐‐ 

1 

dB 

_ 

Equivalent Input Noise Voltage 

‐‐ 

 

‐‐ 

 

50 

 

nV/√Hz 

 

Notes: 1. Absolute Maximum ratings are limiting values above which serviceability may be impaired      2. Pulse Test: PW ≤ 300µs Duty Cycle ≤ 3%

3. Assumes smaller value in numerator 

 

 

2N5564

MONOLITHIC DUAL

N-CHANNEL JFET

Linear Systems replaces discontinued Siliconix & National 2N5564

2N5564 Applications:

Wideband Differential Amps

High-Speed,Temp-Compensated Single-

Ended Input Amps

High-Speed Comparators

Impedance Converters and vibrations

The 2N5564 are monolithic dual JFETS. The monolithic

dual chip design reduces parasitics and gives better

performance at very high frequencies while ensuring

extremely tight matching. These devices are an

excellent choice for use as wideband differential

amplifiers in demanding test and measurement

applications. The 2N5564 is a direct replacement for

discontinued Siliconix and National 2N5564.

The hermetically sealed TO-71 is well suited for military

and harsh environment applications.

(See Packaging Information).

Please contact Micross for full package and die dimensions:

TO-71 (Top View)

Available Packages:

2N5564 in TO-71

2N5564 available as bare die

This is trial version

If you want get full version, please register it, thank you.

www.verypdf.com

Demo (http://www.verypdf.com)

Demo (http://www.verypdf.com)