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ML610Q436 Datasheet(PDF) 21 Page - List of Unclassifed Manufacturers |
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ML610Q436 Datasheet(HTML) 21 Page - List of Unclassifed Manufacturers |
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21 / 35 page ![]() FEDL610Q435-02 LAPIS Semiconductor ML610Q435/ML610Q436 21/35 OPERATING CONDITIONS OF FLASH ROM (VSS = AVSS = 0V) Parameter Symbol Condition Range Unit Operating temperature TOP At write/erase 0 to +40 C VDD At write/erase *1 2.75 to 3.6 VDDL At write/erase *1 2.5 to 2.75 Operating voltage VPP At write/erase *1 7.7 to 8.3 V Write cycles CEP 80 cycles Data retention YDR 10 years *1: In addition the power supply to VDD pin and VPP pin, within the range 2.5V to 2.75V has to be supplied to VDDL pin when programming and eraseing Flash ROM DC CHARACTERISTICS (1/5) (VDD = 1.1 to 3.6V, AVDD = 2.2 to 3.6V, VSS = AVSS = 0V, Ta = 20 to +70C, unless otherwise specified) (1/5) Rating Parameter Symbol Condition Min. Typ. Max. Unit Measuring circuit Ta = 25 C Typ. 10% 500 Typ. 10% kHz 500kHz RC oscillation frequency fRC VDD = 1.3 to 3.6V Ta = 20 to +70 C Typ. 25% 500 Typ. 25% kHz PLL oscillation frequency* 4 fPLL LSCLK = 32.768kHz VDD = 1.8 to 3.6V -2.5% 8.192 +2.5% MHz Low-speed crystal oscillation start time* 2 TXTL 0.3 2 s 500kHz RC oscillation start time TRC 50 500 s High-speed crystal oscillation start time* 3 TXTH VDD = 1.8 to 3.6V ― 2 20 PLL oscillation start time TPLL VDD = 1.8 to 3.6V ― 1 10 Low-speed oscillation stop detect time *1 TSTOP 0.2 3 20 ms Reset pulse width PRST 200 Reset noise elimination pulse width PNRST 0.3 s Power-on reset activation power rise time TPOR 10 ms 1 * 1: When low-speed crystal oscillation stops for a duration more than the low-speed oscillation stop detect time, the system is reset to shift to system reset mode. “A”version(ML610Q435A/Q436A) don’t have this spec. * 2 : Use 32.768KHz Crystal Oscillator C-001R (Epson Toyocom) with capacitance CGL/CDL=0pF. * 3 : Use 4.096MHz Crystal Oscillator HC49SFWB (Kyocera). * 4 : 1024 clock average. RESET RESET_N RESET_N pin reset VDD 0.9xVDD 0.1xVDD TPOR Power on reset PRST VIL1 VIL1 |
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