2SJ409S datasheet(3/5 Pages) HITACHI

3 / 5 page

2SJ409(L), 2SJ409(S)

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Drain to source breakdown

voltage

(BR)DSS

–100

—

D = –10 mA, VGS = 0

Gate to source breakdown

voltage

(BR)GSS

±20

—

G = ±100 µA, VDS = 0

Gate to source leak current

GSS

——

±10

µAV

GS = ±16 V, VDS = 0

Zero gate voltage drain current I

DSS

—

–250

µAV

DS = –80 V, VGS = 0

Gate to source cutoff voltage

GS(off)

–1.0

—

–2.0

D = –1 mA, VDS = –10 V

Static drain to source on state

resistance

DS(on)

—

0.12

0.16

Ω

D = –10 A

GS = –10 V*

—

0.16

0.22

Ω

D = –10 A

GS = –4 V*

Forward transfer admittance

fs|

7.5

—

D = –10 A

DS = –10 V*

Input capacitance

Ciss

—

1860

—

DS = –10 V

Output capacitance

Coss

—

680

—

GS = 0

Reverse transfer capacitance

Crss

—

145

—

f = 1 MHz

Turn-on delay time

d(on)

—

D = –10 A

Rise time

—

115

—

GS = –10 V

Turn-off delay time

d(off)

—

320

—

L = 3 Ω

Fall time

—

170

—

Body to drain diode forward

voltage

—

–1.05

—

F = –20 A, VGS = 0

Body to drain diode reverse

recovery time

—

280

—

F = –20 A, VGS = 0,

diF/dt = 50 A/

µs

See characteristics curves of 2SJ221

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