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STN80T08 Datasheet(PDF) 2 Page - Stanson Technology |
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STN80T08 Datasheet(HTML) 2 Page - Stanson Technology |
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2 / 7 page ![]() STN80T08 N Channel Enhancement Mode MOSFET 80.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2009, Stanson Corp. STN80T08 2011. V1 ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 80 V Gate-Source Voltage VGSS ±25 V Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ ID 80.0 300.0 A Pulsed Drain Current IDM 370 A Avalanche Current IAS 80 A Power Dissipation TA=25℃ PD 200 W Operation Junction Temperature TJ 175 ℃ Storgae Temperature Range TSTG -55/175 ℃ Thermal Resistance-Junction to Ambient RθJA 0.75 ℃/W |
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