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STN2018 Datasheet(PDF) 3 Page - Stanson Technology

Part # STN2018
Description  N Channel Enhancement Mode MOSFET
PDF  7 Pages
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Manufacturer  STANSON [Stanson Technology]
Direct Link  http://www.stansontech.com
Logo STANSON - Stanson Technology

STN2018 Datasheet(HTML) 3 Page - Stanson Technology

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STN2018
N Channel Enhancement Mode MOSFET
10.0A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp
.
STN2018 2013. V1
ELECTRICAL CHARACTERISTICS
( Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Condition
Min
Typ Max Unit
Static
Drain-Source Breakdown
Voltage
V(BR)DSS
VGS=0V,ID=250uA
20
V
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250 uA
0.6
1.4
V
Gate Leakage Current
IGSS
VDS=0V,VGS=±12V
±100
nA
VDS=20VGS=0V
1
Zero Gate Voltage Drain
Current
IDSS
TJ=55℃
VDS=20VGS=0V
10
uA
On-State Drain Current
ID(on)
VDS≥5V,VGS=4.5
6
A
Drain-source On-Resistance
RDS(on)
VGS=4.5V, ID=10A
VGS=2.5V, ID=7.0A
0.008
0.011
0.012
0.015
Ω
Forward Tran Conductance
gfs
VDS=15.0V,ID=5.0A
30
S
Diode Forward Voltage
VSD
IS=1.0A,VGS=0V
0.8
1.2
V
Dynamic
Total Gate Charge
Qg
18
25
Gate-Source Charge
Qgs
4.2
Gate-Drain Charge
Qgd
VDS=10V,VGS=4.5V
ID=5.0A
6.8
nC
Input Capacitance
Ciss
850
Output Capacitance
Coss
135
Reverse TransferCapacitance
Crss
VDS=10V,VGS=0V
f=1MHz
105
pF
12
16
Turn-On Time
td(on)
tr
10
28
30
55
Turn-Off Time
td(off)
tf
VDD=10V,RL=10Ω
ID=1.0A,VGEN=4.5V
RG=6Ω
35
58
nS



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