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IXTH22N50P Datasheet(PDF) 1 Page - IXYS Corporation |
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IXTH22N50P Datasheet(HTML) 1 Page - IXYS Corporation |
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1 / 6 page  © 2009 IXYS CORPORATION, All Rights Reserved DS99351G(07/09) V DSS = 500V I D25 = 22A R DS(on) ≤≤≤≤≤ 270mΩ Ω Ω Ω Ω t rr(typ) = 400ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings V DSS T J = 25 °C to 150°C 500 V V DGR T J = 25 °C to 150°C, R GS = 1MΩ 500 V V GSS Continuous ± 30 V V GSM Transient ± 40 V I D25 T C = 25°C22 A I DM T C = 25°C, Pulse Width Limited by TJM 50 A I A T C = 25°C22 A E AS T C = 25°C 750 mJ dV/dt I S ≤ I DM, VDD ≤ VDSS,TJ ≤ 150°C 10 V/ns P D T C = 25°C 350 W T J -55 ... +150 °C T JM 150 °C T stg -55 ... +150 °C T L Maximum Lead Temperature for Soldering 300 °C T SOLD Plastic Body for 10s 260 °C M d Mounting Torque (TO-247 & TO-3P) 1.13/10 Nm/lb.in. F C Mounting Force (PLUS220) 11..65/2.5..14.6 N/lb. Weight PLUS220 types 4.0 g TO-3P 5.5 g TO-247 6.0 g IXTV22N50P IXTV22N50PS IXTQ22N50P IXTH22N50P Symbol Test Conditions Characteristic Values (T J = 25°C, Unless Otherwise Specified) Min. Typ. Max. BV DSS V GS = 0V, ID = 250μA 500 V V GS(th) V DS = VGS, ID = 250μA 3.0 5.5 V I GSS V GS = ± 30V, VDS = 0V ± 100 nA I DSS V DS = VDSS, VGS= 0V 5 μA T J = 125°C 50 μA R DS(on) V GS = 10V, ID = 0.5 • ID25, Note 1 270 m Ω PolarTM Power MOSFET s G = Gate D = Drain S = Source TAB = Drain Features International Standard Packages Avalanche Rated Fast Intrinsic Diode Low Package Inductance Advantages High Power Density Easy to Mount Space Savings Applications Switched-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls PLUS220SMD (IXTV_S) PLUS220 (IXTV) G D S D (TAB) G S TO-247 (IXTH) D (TAB) D (TAB) TO-3P (IXTQ) D (TAB) G D S |
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