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other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.

FEATURES 

DIRECT REPLACEMENT FOR SILICONIX SST5114 

LOW ON RESISTANCE 

LOW CAPACITANCE 

6pF 

ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) 

Maximum Temperatures 

Storage Temperature ‐55°C to +200°C 

Operating Junction Temperature ‐55°C to +200°C 

Maximum Power Dissipation 

Continuous Power Dissipation  

500mW 

MAXIMUM CURRENT

Gate Current (Note 1) 

MAXIMUM VOLTAGES 

Gate to Drain Voltage 

Gate to Source Voltage 

SST5114 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL 

CHARACTERISTIC 

MIN 

TYP. 

MAX 

UNITS 

CONDITIONS 

Gate to Source Breakdown Voltage 

30 

‐‐ 

‐‐ 

 

 

V 

Gate to Source Cutoff Voltage 

4 

‐‐ 

10 

Gate to Source Forward Voltage 

‐‐ 

‐0.7 ‐1 

 

 

Drain to Source On Voltage 

‐‐ 

‐1.0 ‐1.3 

‐‐ 

‐0.7 

‐‐ 

‐‐ 

‐0.5 

‐‐ 

Drain to Source Saturation Current (Note 2) ‐30 

‐‐ 

‐90 

mA 

VDS = ‐18V, VGS = 0V 

Gate Reverse Current 

‐‐ 

5 

500  

 

pA 

 

VGS = 20V,  VDS = 0V 

Gate Operating Current 

‐‐ 

‐5 

‐‐ 

VDS = ‐15V,  ID = ‐1mA 

 

 

Drain Cutoff Current 

‐‐ 

‐10 ‐500 

VDS = ‐15V, VGS = 12V 

‐‐ 

‐10 

‐‐ 

VDS = ‐15V, VGS = 7V 

‐‐ 

‐10 

‐‐ 

VDS = ‐15V, VGS = 5V 

Drain to Source On Resistance 

‐‐ 

‐‐ 

75 Ω 

ID = ‐1mA,   VGS = 0V 

SST5114 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) 

SYMBOL 

CHARACTERISTIC 

MIN 

TYP. 

MAX 

UNITS 

CONDITIONS 

Forward Transconductance 

‐‐ 

4.5 

‐‐ 

mS 

Output Conductance 

‐‐ 

20 

‐‐ 

µS 

Drain to Source On Resistance 

‐‐ 

‐‐ 

75 Ω 

Input Capacitance 

‐‐ 

20 

25  

pF 

 

 

Reverse Transfer Capacitance 

‐‐ 

5 

7 

‐‐ 

6 

‐‐ 

‐‐ 

6 

‐‐ 

Equivalent Noise Voltage 

‐‐ 

20 

‐‐ 

nV/√Hz 

SST5114 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted) 

SYMBOL 

CHARACTERISTIC  

UNITS 

CONDITIONS 

Turn On Time 

6  

 

ns 

 

See Switching Circuit 

Turn On Rise Time 

10 

Turn Off Time 

6 

Turn Off Fall Time 

15 

                                                                                                                 

SST5114 SWITCHING CIRCUIT PARAMETERS                                                                                                                          

20V  

430Ω 

 

100Ω 

 

SST5114

P-CHANNEL JFET

Linear Systems replaces discontinued Siliconix SST5114

This analog switch is designed for inverting switching

into inverting input of an Operational Amplifier.

The SOT-23 package provides ease of manufacturing,

and a lower cost assembly option.

(See Packaging Information).

SST5114 Applications:

Analog Switches

Commutators

Choppers

SST5114 Benefits:

Low On Resistance

Switches directly from TTL logic

Note 1 ‐ Absolute maximum ratings are limiting values above which SST5114 serviceability may be impaired.  Note 2 – Pulse test: PW≤ 300 µs, Duty Cycle ≤ 3% 

SWITCHING TEST CIRCUIT

Micross Components Europe

Available Packages:

SST5114 in SOT-23

SST5114 in bare die.

Please contact Micross for full

package and die dimensions

Tel: +44 1603 788967

SOT-23 (Top View)