SSF2N60D datasheet(2/8 Pages) SILIKRON

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SSF2N60D

©Silikron Semiconductor CO.,LTD.

2013.08.27

Version : 1.0

page 2 of 8

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Thermal Resistance

Symbol

Characteristics

Typ.

Max.

Units

RθJC

Junction-to-case③

—

2.95

℃/W

RθJA

Junction-to-ambient (t ≤ 10s) ④

—

110

℃/W

Electrical Characteristics @TA=25℃ unless otherwise specified

Symbol

Parameter

Min.

Typ.

Max.

Units

Conditions

V(BR)DSS

Drain-to-Source breakdown voltage

600

—

VGS = 0V, ID = 250μA

RDS(on)

Static Drain-to-Source on-resistance

—

3.8

4.5

VGS=10V,ID = 1.0A

—

8.2

—

TJ = 125℃

VGS(th)

Gate threshold voltage

—

VDS = VGS, ID = 250μA

—

2.4

—

TJ = 125℃

IDSS

Drain-to-Source leakage current

—

μA

VDS = 600V,VGS = 0V

—

TJ = 125℃

IGSS

Gate-to-Source forward leakage

—

100

VGS =30V

—

-100

VGS = -30V

Total gate charge

—

5.7

—

ID = 2.0A,

VDS=480V,

VGS = 10V

Qgs

Gate-to-Source charge

—

1.7

—

Qgd

Gate-to-Drain("Miller") charge

—

2.0

—

td(on)

Turn-on delay time

—

9.1

—

VGS=10V, VDS=300V,

RGEN=25Ω, ID=2.0A

Rise time

—

6.3

—

td(off)

Turn-Off delay time

—

Fall time

—

Ciss

Input capacitance

—

329

—

VGS = 0V

VDS = 25V

ƒ = 1MHz

Coss

Output capacitance

—

Crss

Reverse transfer capacitance

—

Source-Drain Ratings and Characteristics

Symbol

Parameter

Min.

Typ.

Max.

Units

Conditions

Continuous Source Current

(Body Diode)

—

MOSFET symbol

showing

the

integral reverse

p-n junction diode.

ISM

Pulsed Source Current

(Body Diode)

—

Diode Forward Voltage

—

0.84

1.4

IS=1.9A, VGS=0V

trr

Reverse Recovery Time

—

357

—

TJ = 25°C, IF =2A,

di/dt = 10

0A/μs

Qrr

Reverse Recovery Charge

—

1030

—

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