2010.1.10

Version: 1.0

page

2of6

SSF8N60

Electrical Characteristics @TJ=25

ْC (unless otherwise specified)

Parameter

Min.

Typ.

Max.

Units

Test Conditions

V(BR)DSS

Drain-to-Source Breakdown Voltage

600

—

—

V

VGS=0V,ID=250μA

△ V(BR)DSS/

△ TJ

Breakdown Voltage Temp.Coefficient

—

0.6

—

V

/ْC Reference to 25ْC,ID=250μA

RDS(on)

Static Drain-to-Source On-resistance

—

0.85

1.1

Ω

VGS=10V,ID=3.8A

④

VGS(th)

Gate Threshold Voltage

2.0

—

4.0

V

VDS=VGS,ID=250μA

gfs

Forward Transconductance

—

6.4

—

S

VDS=40V,ID=3.8A

IDSS

Drain-to-Source Leakage current

—

—

1

uA

VDS=600V,VGS=0V

—

—

10

VDS=480V,VGS=0V,TJ=

150ْC

IGSS

Gate-to-Source Forward leakage

—

—

0.5

uA

VGS=30V

Gate-to-Source Reverse leakage

—

—

-0.5

VGS=-30V

Qg

Total Gate Charge

—

28.5

15

nC

ID=7.5A

VDS=480V

VGS=10V

Qgs

Gate-to-Source charge

—

7

—

Qgd

Gate-to-Drain("Miller") charge

—

14.6

—

td(on)

Turn-on Delay Time

—

29

70

nS

VDD=300V

ID=7.5A

RG=25

Ω

tr

Rise Time

—

78

160

td(off)

Turn-Off Delay Time

—

65

130

tf

Fall Time

—

60

128

Ciss

Input Capacitance

—

1000

1350

pF

VGS=0V

VDS=25V

f=1.0MHZ

Coss

Output Capacitance

—

125

165

Crss

Reverse Transfer Capacitance

—

16

21

Source-Drain Ratings and Characteristics

Parameter

Min.

Typ.

Max.

Units

Test Conditions

IS

Continuous Source Current

(Body Diode)

—

—

8.2

A

MOSFET symbol

showing the

integral reverse

p-n junction diode.

ISM

Pulsed Source Current

(Body Diode)

①

—

—

32.8

VSD

Diode Forward Voltage

—

—

1.3

V

TJ=

Trr

Reverse Recovery Time

—

300

—

nS

TJ=

25ْC,IF=7.2A

Qrr

Reverse Recovery Charge

—

1.8

uC

Notes:

① Repetitive rating; pulse width limited by maximum. junction temperature

② L = 23.5mH, IAS =6.5A, VDD = 50V, RG = 25

ΩStarting, TJ = 25°C

③

ISD≤4A, di/dt≤200A/μs, VDD≤V(BR)DSS, TJ≤25°C

④

Pulse width≤300μS; duty cycle≤2%