SSF8NP60U datasheet(2/8 Pages) SILIKRON

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SSF8NP60U

©Silikron Semiconductor CO.,LTD.

2013.08.12

Version : 1.0

page 2 of 8

www.silikron.com

Thermal Resistance

Symbol

Characterizes

Typ.

Max.

Units

RθJC

Junction-to-case ③

—

2.0

℃/W

RθJA

Junction-to-ambient (t ≤ 10s) ④

—

℃/W

Electrical Characterizes @TA=25℃ unless otherwise specified

Symbol

Parameter

Min.

Typ.

Max.

Units

Conditions

V(BR)DSS

Drain-to-Source breakdown voltage

600

—

VGS = 0V, ID = 250μA

RDS(on)

Static Drain-to-Source on-resistance

—

0.73

0.85

VGS=10V,ID = 1A

—

1.54

—

TJ = 125°C

—

0.78

1.0

VGS=10V,ID = 2.8A

—

1.76

—

TJ = 125°C

VGS(th)

Gate threshold voltage

—

VDS = VGS, ID = 250μA

—

2.5

—

TJ = 125°C

IDSS

Drain-to-Source leakage current

—

μA

VDS = 600V,VGS = 0V

—

TJ = 125°C

IGSS

Gate-to-Source forward leakage

—

100

VGS =30V

—

-100

VGS = -30V

Total gate charge

—

ID = 4.6A,

VDS=480V,

VGS = 10V

Qgs

Gate-to-Source charge

—

2.1

—

Qgd

Gate-to-Drain("Miller") charge

—

5.3

—

td(on)

Turn-on delay time

—

9.8

—

VGS=10V, VDS =300V,

RGEN=25Ω,ID =4.6A

Rise time

—

td(off)

Turn-Off delay time

—

Fall time

—

Ciss

Input capacitance

—

344

—

VGS = 0V

VDS = 100V

ƒ = 1MHz

Coss

Output capacitance

—

Crss

Reverse transfer capacitance

—

3.0

—

Source-Drain Ratings and Characteristics

Symbol

Parameter

Min.

Typ.

Max.

Units

Conditions

Continuous Source Current

(Body Diode)

—

8 ①

MOSFET symbol

showing

the

integral reverse

p-n junction diode.

ISM

Pulsed Source Current

(Body Diode)

—

Diode Forward Voltage

—

0.83

1.2

IS=2.8A, VGS=0V

trr

Reverse Recovery Time

—

181

—

TJ = 25°C, IF =4.6A,

di/dt = 10

0A/μs

Qrr

Reverse Recovery Charge

—

1.0

—

μC

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