HAT1024R datasheet(3/10 Pages) HITACHI

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HAT1024R

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain to source breakdown

voltage

(BR)DSS

–30

—

D = –10mA, VGS = 0

Gate to source breakdown

voltage

(BR)GSS

±20

—

G = ±100µA, VDS = 0

Gate to source leak current

GSS

——

±10

µAV

GS = ±16V, VDS = 0

Zero gate voltege drain current

DSS

—

–10

µAV

DS = –30 V, VGS = 0

Gate to source cutoff voltage

GS(off)

–1.0

—

–2.5

DS = –10V, I D = –1mA

Static drain to source on state

DS(on)

—

0.12

0.16

Ω

D = –2A, VGS = –10V

Note4

resistance

DS(on)

—

0.2

0.34

Ω

D = –2A, VGS = –4V

Note4

Forward transfer admittance

fs|

2.5

3.5

—

D = –2A, VDS = –10V

Note4

Input capacitance

Ciss

—

350

—

DS = –10V

Output capacitance

Coss

—

230

—

GS = 0

Reverse transfer capacitance

Crss

—

f = 1MHz

Turn-on delay time

d(on)

—

GS = –4V, ID = –2A

Rise time

—

110

—

DD ≅ –10V

Turn-off delay time

d(off)

—20

—

Fall time

—30

—

Body–drain diode forward

voltage

—

–1.0

–1.5

IF = –3.5A, V

GS = 0

Note4

Body–drain diode reverse

recovery time

—

IF = –3.5A, V

GS = 0

diF/ dt =20A/

µs

Note:

4. Pulse test

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