IXGP24N60C4 datasheet(1/2 Pages) IXYS

Part #	IXGP24N60C4

Description	High-Gain IGBTs

PDF	2 Pages

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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High-Gain IGBTs

IXGA24N60C4

IXGP24N60C4

IXGH24N60C4

V

CES

= 600V

I

C110

= 24A

V

CE(sat)

≤≤≤≤≤ 2.70V

t

fi(typ)

= 68ns

Symbol

Test Conditions

Maximum Ratings

V

CES

T

J

= 25°C to 150°C

600

V

CGR

T

J

= 25°C to 150°C, R

GE = 1MΩ

600

V

GES

Continuous

±20

V

GEM

Transient

±30

V

I

C25

T

C = 25°C

56

A

I

C110

T

C = 110°C

24

A

I

CM

T

C = 25°C, 1ms

130

A

SSOA

V

GE = 15V, TVJ = 125°C, RG = 10Ω

I

CM = 48

A

(RBSOA)

Clamped Inductive Load

@

≤ V

CES

P

C

T

C = 25°C

190

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

Maximum Lead Temperature for Soldering

300

°C

T

SOLD

1.6 mm (0.062in.) from Case for 10s

260

°C

F

C

Mounting Force (TO-263)

10..65 / 2.2..14.6

N/lb.

M

d

Mounting Torque (TO-220 & TO-247)

1.13 / 10

Nm/lb.in.

Weight

TO-263

2.5

g

TO-220

3.0

g

TO-247

6.0

g

DS100253B(12/12)

High-Speed PT Trench IGBTs

Advance Technical Information

Features

Optimized for Low Switching Losses

Square RBSOA

International Standard Packages

Advantages

High Power Density

Low Gate Drive Requirement

Applications

Power Inverters

UPS

Motor Drives

SMPS

PFC Circuits

Battery Chargers

Welding Machines

Lamp Ballasts

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, Unless Otherwise Specified

Min.

Typ.

Max.

BV

CES

I

C

= 250

μA, V

GE= 0V

600

V

GE(th)

I

C

= 250

μA, V

CE = VGE

4.0

6.5

V

I

CES

V

CE = VCES, VGE = 0V

10

μA

T

J = 125°C

500 μA

I

GES

V

CE = 0V, VGE = ±20V

±100

nA

V

CE(sat)

I

C

= I

C110, VGE = 15V, Note 1

2.28

2.70

V

T

J = 125°C

1.95

V

TO-263 (IXGA)

G

E

C (Tab)

G

C E

TO-220 (IXGP)

C (Tab)

G = Gate

C

= Collector

E = Emitter

Tab = Collector

TO-247 (IXGH)

C (Tab)

G

C

E

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