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SSF1007 Datasheet(PDF) 1 Page - Silikron Semiconductor Co.,LTD.

Part # SSF1007
Description  Advanced trench MOSFET process technology
PDF  5 Pages
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Manufacturer  SILIKRON [Silikron Semiconductor Co.,LTD.]
Direct Link  http://www.silikron.com
Logo SILIKRON - Silikron Semiconductor Co.,LTD.

SSF1007 Datasheet(HTML) 1 Page - Silikron Semiconductor Co.,LTD.

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SSF1007 
Main Product Characteristics:
©Silikron Semiconductor CO.,LTD.
2011.04.02
Version : 1.0
page
1of 5
www.silikron.com
 
 
VDSS
100V
RDS(on)
5.8mohm(Typ)
ID
130A
Features and Benefits:
SSF1007 TOP View (TO220)
Advanced trench MOSFET process technology
Special designed for convertors and power controls
Ultra low on-resistance
175℃ operating temperature
HighAvalanche capability and 100% tested
Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an
extremely efficient and reliable device for use in power switching application and a wide variety of other
applications.
Absolute max Rating:
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V①
130
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V①
91
IDM
Pulsed Drain Current②
520
A
Power Dissipation③
258
W
PD @TC = 25°C
Linear derating factor
1.7
W/ Cْ
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy @ L=0.3mH②
735
mJ
IAR
Avalanche Current @ L=0.3mH②
75
A
TJ TSTG
Operating Junction and Storage Temperature Range
-55 to + 175
°C
Thermal Resistance
Symbol
Characterizes
Value
Unit
RθJC
Junction-to-case③
0.58
℃
/W
RθJA
Junction-to-ambient (t ≤ 10s) ④
62
℃
/W


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