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SSF1007 Datasheet(PDF) 1 Page - Silikron Semiconductor Co.,LTD. |
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SSF1007 Datasheet(HTML) 1 Page - Silikron Semiconductor Co.,LTD. |
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1 / 5 page ![]() SSF1007 Main Product Characteristics: ©Silikron Semiconductor CO.,LTD. 2011.04.02 Version : 1.0 page 1of 5 www.silikron.com VDSS 100V RDS(on) 5.8mohm(Typ) ID 130A Features and Benefits: SSF1007 TOP View (TO220) Advanced trench MOSFET process technology Special designed for convertors and power controls Ultra low on-resistance 175℃ operating temperature HighAvalanche capability and 100% tested Description: It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolute max Rating: Symbol Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V① 130 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V① 91 IDM Pulsed Drain Current② 520 A Power Dissipation③ 258 W PD @TC = 25°C Linear derating factor 1.7 W/ Cْ VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy @ L=0.3mH② 735 mJ IAR Avalanche Current @ L=0.3mH② 75 A TJ TSTG Operating Junction and Storage Temperature Range -55 to + 175 °C Thermal Resistance Symbol Characterizes Value Unit RθJC Junction-to-case③ 0.58 ℃ /W RθJA Junction-to-ambient (t ≤ 10s) ④ 62 ℃ /W |
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