2009.6.10

Version: 2.1

page

2of5

SSF1090

Gate-to-Source reverse leakage

—

—

-100

Total gate charge

—

21.18

nC

Gate-to-Source charge

—

4.7

—

Gate-to-Drain("Miller") charge

—

8.5

—

Turn-on delay time

—

10

nS

Rise time

—

9.5

Turn-Off delay time

—

18.3

Fall time

—

4.2

Input capacitance

—

697

750

pF

f=1.0MHZ

Output capacitance

—

59

110

Reverse transfer capacitance

—

43

45

Source-Drain Ratings and Characteristics

Parameter

Min.

Typ.

Max.

Units

Test Conditions

Continuous Source Current

(Body Diode)

—

—

3

A

MOSFET symbol

showing the

integral reverse

p-n junction diode.

Pulsed Source Current

(Body Diode)

①

—

—

18

Diode Forward Voltage

—

—

1.3

V

Reverse Recovery Time

—

35

—

nS

di/dt=100A/μs ③

Reverse Recovery Charge

—

67.2

—

μC

Forward Turn-on Time

Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)

EAS Test Circuit:

Gate Charge Test Circuit:

L

1mA

Notes:

① Repetitive rating; pulse width limited by max junction temperature

② Test condition: L =30mH, VDD = 50V, Id=4A

③

Pulse width≤300μS, duty cycle≤1.5% ; RG = 25Ω Starting TJ = 25°C