SSF6007 datasheet(2/6 Pages) SILIKRON

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SSF6007

©Silikron Semiconductor CO.,LTD.

2014.02.10

Version : 1.1

page 2 of 6

www.silikron.com

Electrical Characterizes @TA=25℃ unless otherwise specified

Symbol

Parameter

Min.

Typ.

Max.

Units

Conditions

V(BR)DSS

Drain-to-Source breakdown voltage

-50

—

VGS = 0V, ID = -10μA

RDS(on)

Static Drain-to-Source on-resistance

—

2.1

VGS=-10V,ID = -130mA

VGS(th)

Gate threshold voltage

-0.8

—

-2

VDS = VGS, ID = -1mA

IDSS

Drain-to-Source leakage current

—

-0.1

μA

VDS =-40V,VGS = 0V

-1

VDS =-50V,VGS = 0V

—

-50

TJ = 125°C

IGSS

Gate-to-Source forward leakage

—

VGS =20V

—

-10

VGS = -20V

gfs

Forward Transconductance

—

VDS =-25 V ID =-130m A

Ciss

Input Capacitance

—

VGS = 0;

VDS = -5 V;

f = 1 MHz

Coss

Output Capacitance

—

Crss

Reverse Transfer Capacitance

—

td(on)

Turn

–On Delay Time

—

3.1

—

VDD =

–15V;

ID =

–2.5 A;

RL = 50ohm

Rise Time

—

1.3

—

td(off)

Turn

–Off Delay Time

—

Fall Time

—

7.5

—

Source-Drain Ratings and Characteristics

Symbol

Parameter

Min.

Typ.

Max.

Units

Conditions

Continuous Source Current

(Body Diode)

—

130

MOSFET symbol

showing

the

integral reverse

p-n junction diode.

ISM

Pulsed Source Current

(Body Diode)

—

520

Diode Forward Voltage

—

-1.3

IS=-130mA, VGS=0V

Notes

①Calculated continuous current based on maximum allowable junction temperature.

②Repetitive rating; pulse width limited by max. junction temperature.

③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal

resistance.

④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a

still air environment with TA =25°C

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