SSF6014D datasheet(2/8 Pages) SILIKRON

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SSF6014D

©Silikron Semiconductor CO.,LTD.

2012.02.25

Version : 2.2

page 2 of 8

www.silikron.com

Thermal Resistance

Symbol

Characterizes

Typ.

Max.

Units

RθJC

Junction-to-case③

1.31

—

℃/W

RθJA

Junction-to-ambient

④

—

℃/W

Electrical Characterizes @T

A=25℃ unless otherwise specified

Symbol

Parameter

Min.

Typ.

Max.

Units

Conditions

V(BR)DSS

Drain-to-Source breakdown voltage

—

VGS = 0V, ID = 250μA

RDS(on)

Static Drain-to-Source on-resistance

—

mΩ

VGS=10V,ID = 30A

VGS(th)

Gate threshold voltage

2.0

—

4.0

VDS = VGS, ID = 250μA

—

2.0

—

TJ = 125℃

IDSS

Drain-to-Source leakage current

—

μA

VDS = 60V,VGS = 0V

—

TJ = 150°C

IGSS

Gate-to-Source forward leakage

—

100

VGS =20V

—

-100

VGS = -20V

Total gate charge

—

ID = 30A,

VDS=30V,

VGS = 10V

Qgs

Gate-to-Source charge

—

Qgd

Gate-to-Drain("Miller") charge

—

td(on)

Turn-on delay time

—

14.6

—

VGS=10V, VDS=30V,

RL=15Ω,

RGEN=2.5Ω

Rise time

—

14.2

—

td(off)

Turn-Off delay time

—

Fall time

—

7.3

—

Ciss

Input capacitance

—

1480

—

VGS = 0V

VDS = 25V

ƒ = 1MHz

Coss

Output capacitance

—

190

—

Crss

Reverse transfer capacitance

—

135

—

Source-Drain Ratings and Characteristics

Symbol

Parameter

Min.

Typ.

Max.

Units

Conditions

Continuous Source Current

(Body Diode)

—

MOSFET symbol

showing

the

integral reverse

p-n junction diode.

ISM

Pulsed Source Current

(Body Diode)

—

240

Diode Forward Voltage

—

1.3

IS=30A, VGS=0V

trr

Reverse Recovery Time

—

TJ = 25°C, IF =60A,

di/dt = 10

0A/μs

Qrr

Reverse Recovery Charge

—

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