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HETERO JUNCTION FIELDEFFECT TRANSISTOR

NE321000

C to Ka BAND SUPER LOW NOISE AMPLIFIER

N-CHANNEL HJ-FET CHIP

Document No. P14270EJ2V0DS00 (2nd edition)

Date Published November 1999 N CP(K)

Printed in Japan

DATA SHEET

1999

©

The mark

shows major revised points.

DESCRIPTION

The NE321000 is Hetero Junction FET that utilizes the hetero junction to create high mobility electrons.

Its

excellent low noise and associated gain make it suitable for DBS and another commercial systems, industrial and

space applications.

FEATURES

•

Super Low Noise Figure & High Associated Gain

•

≤ 0.20

µm

•

µm

ORDERING INFORMATION (PLAN)

Part Number

Quality Grade

NE321000

Standard (Grade D)

Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order:

NE321000)

Parameter

Symbol

Ratings

Unit

Drain to Source Voltage

4.0

V

Gate to Source Voltage

–3.0

V

Drain Current

mA

Gate Current

100

µA

Total Power Dissipation

Note

200

mW

Channel Temperature

175

°C

Storage Temperature

–65 to +175

°C

Note Chip mounted on an Alumina heatsink (size: 3

× 3 × 0.6 t)