©Silikron Semiconductor CO.,LTD.

2

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v1.1

SSF6646

Zero Gate Voltage Drain Current

1

μA

Gate-Body Leakage Current

±100

nA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

1

3

V

Drain-Source On-State Resistance

50

75

mΩ

44

60

mΩ

Forward Transconductance

5

S

DYNAMIC CHARACTERISTICS (Note4)

Input Capacitance

F=1.0MHz

700

PF

Output Capacitance

100

PF

Reverse Transfer Capacitance

50

PF

SWITCHING CHARACTERISTICS (Note 4)

Turn-on Delay Time

13

nS

Turn-on Rise Time

10

nS

Turn-Off Delay Time

30

nS

Turn-Off Fall Time

6

nS

Total Gate Charge

15

nC

Gate-Source Charge

2

nC

Gate-Drain Charge

4

nC

DRAIN-SOURCE DIODE CHARACTERISTICS

Diode Forward Voltage (Note 3)

0.8

1.2

V

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on 1in

3.

Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production testing.