Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.

Feb. 2014. Rev. 1.0

Features

■ High ruggedness

■ R

■ Gate Charge (Typical 21nC)

■ Improved dv/dt Capability

■ 100% Avalanche Tested

General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics. This power MOSFET is usually used at high efficient DC to DC

converter block and switch mode power supply.

N-channel D-PAK MOSFET

Absolute maximum ratings

Symbol

Parameter

Value

Unit

V

DSS

Drain to Source Voltage

100

V

I

D

Continuous Drain Current (@T

3*

A

Continuous Drain Current (@T

1.9*

A

I

DM

Drain current pulsed

(note 1)

12

A

V

GS

Gate to Source Voltage

± 16

V

E

AS

Single pulsed Avalanche Energy

(note 2)

187

mJ

E

AR

Repetitive Avalanche Energy

(note 1)

40

mJ

dv/dt

Peak diode Recovery dv/dt

(note 3)

5

V/ns

P

D

Total power dissipation (@T

44

W

0.35

T

Operating Junction Temperature & Storage Temperature

-55 ~ + 150

T

L

Maximum Lead Temperature for soldering

purpose, 1/8 from Case for 5 seconds.

300

Thermal characteristics

Symbol

Parameter

Value

Unit

R

thjc

Thermal resistance, Junction to case

2.84

R

Thermal resistance, Junction to ambient (PCB Mount)

R

thja

Thermal resistance, Junction to ambient

80.2

1/5

*. Drain current is limited by junction temperature.

BV

I

D

: 3A

R

SW3N10

SAMWIN

1

2

3

Item

Sales Type

Marking

Package

Packaging

1

SW D 3N10

SW3N10

TO-252

REEL

Order Codes

1. Gate 2. Drain 3. Source

1

2

3

TO-252

*. The value varied due to mounted PCB pad areas