Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.

Oct. 2012. Rev. 3.0

1/5

SAMWIN

Features

■ High ruggedness

■ R

Ω)@V

■ Gate Charge (Typ 30nC)

■ Improved dv/dt Capability

■ 100% Avalanche Tested

General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics. This power MOSFET is usually used at high efficient DC to DC converter

block and switch mode power supply.

N-channel MOSFET

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220

TO-220F

Drain to Source Voltage

600

V

4.0

4.0*

A

2.5

2.5*

A

Drain current pulsed

(note 1)

16

A

Gate to Source Voltage

±30

V

Single pulsed Avalanche Energy

(note 2)

405

mJ

Repetitive Avalanche Energy

(note 1)

43

mJ

dv/dt

Peak diode Recovery dv/dt

(note 3)

4

V/ns

198

33

W

1.58

0.26

Operating Junction Temperature & Storage Temperature

-55 ~ + 150

Maximum Lead Temperature for soldering

purpose, 1/8 from Case for 5 seconds.

300

Thermal characteristics

Symbol

Parameter

Value

Unit

TO-220

TO-220F

Thermal resistance, Junction to case

0.63

3.8

Thermal resistance, Case to Sink

0.5

-

Thermal resistance, Junction to ambient

65

*. Drain current is limited by junction temperature.

BV

I

D

: 4.0A

R

1

2

3

1. Gate 2. Drain 3. Source

TO-220F

1

2

3

TO-220

SW4N60

1

2

3

Order Codes

Item

Sales Type

Marking

Package

Packaging

1

SW P 4N60

SW4N60

TO-220

TUBE

2

SW F 4N60

SW4N60

TO-220F

TUBE