Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.

Oct. 2012. Rev. 3.0

1/5

SAMWIN

Features

■ High ruggedness

■ R

Ω)@V

■ Gate Charge (Typical 29nC)

■ Improved dv/dt Capability

■ 100% Avalanche Tested

General Description

These N-channel enhancement mode power field effect transistors are produced using

SAMWIN’s proprietary, planar stripe, DMOS technology.

This advanced technology enable power MOSFET to have better characteristics, such as

fast switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics. These devices are widely used in AC-DC power suppliers, DC-DC

converters and H-bridge PWM motor drivers

N-channel MOSFET

Absolute maximum ratings

Thermal characteristics

Symbol

Parameter

Value

Unit

TO-220F

TO-251

TO-252

Thermal resistance, Junction to case

3.8

5.3

Thermal resistance, Case to Sink

-

-

Thermal resistance, Junction to ambient

60

60

BV

I

D

: 6A

R

1

2

3

1. Gate 2. Drain 3. Source

1

2

3

1

2

3

TO-251

TO-252

SW6N60

Item

Sales Type

Marking

Package

Packaging

1

SW F 6N60

SW6N60

TO-220F

TUBE

2

SW I 6N60

SW6N60

TO-251

TUBE

3

SW D 6N60

SW6N60

TO-252

REEL

Order Codes

TO-220F

1

2

3

Symbol

Parameter

Value

Unit

TO-220F

TO-251/252

Drain to Source Voltage

600

V

6.0*

A

Drain current pulsed

(note 1)

24*

A

Gate to Source Voltage

±30

V

Single pulsed Avalanche Energy

(note 2)

230

mJ

Repetitive Avalanche Energy

(note 1)

20

mJ

dv/dt

Peak diode Recovery dv/dt

(note 3)

4.5

V/ns

TO-220F

TO-251/252

50

24

W

0.4

0.19

Operating Junction Temperature & Storage Temperature

-55 ~ + 150

Maximum Lead Temperature for soldering

purpose, 1/8 from Case for 5 seconds.

300

*. Drain current is limited by junction temperature.