Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.

May. 2014. Rev.1.0

Features

■ High ruggedness

■ R

■ Gate Charge (Typical 108nC)

■ Improved dv/dt Capability

■ 100% Avalanche Tested

N-channel TO-3P MOSFET

Absolute maximum ratings

Thermal characteristics

Symbol

Parameter

Value

Unit

R

thjc

Thermal resistance, Junction to case

0.34

R

thcs

Thermal resistance, Case to Sink

R

thja

Thermal resistance, Junction to ambient

38.6

1/5

BV

I

D

: 20A

R

1

2

3

SW20N60U

SAMWIN

Item

Sales Type

Marking

Package

Packaging

1

SW W 20N60

SW20N60U

TO-3P

TUBE

Order Codes

Symbol

Parameter

Value

Unit

V

DSS

Drain to Source Voltage

600

V

I

D

Continuous Drain Current (@T

20*

A

Continuous Drain Current (@T

12.6*

A

I

DM

Drain current pulsed

(note 1)

80

A

V

GS

Gate to Source Voltage

± 30

V

E

AS

Single pulsed Avalanche Energy

(note 2)

750

mJ

E

AR

Repetitive Avalanche Energy

(note 1)

200

mJ

dv/dt

Peak diode Recovery dv/dt

(note 3)

5

V/ns

P

D

Total power dissipation (@T

367.7

W

2.9

T

Operating Junction Temperature & Storage Temperature

-55 ~ + 150

T

L

Maximum Lead Temperature for soldering

purpose, 1/8 from Case for 5 seconds.

300

General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics. This power MOSFET is usually used at high efficient DC to DC

converter block and switch mode power supply.

*. Drain current is limited by junction temperature.

1. Gate 2. Drain 3. Source

1

2

3

TO-3P