Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.

Jan. 2013. Rev. 2.0

1/5

SAMWIN

Features

■

High ruggedness

■

■

Gate Charge (Typical 34nC)

■

Improved dv/dt Capability

■

100% Avalanche Tested

General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics. This power MOSFET is usually used at high efficient DC to DC

converter block and switch mode power supply.

N-channel MOSFET

Absolute maximum ratings

Symbol

Parameter

Value

Unit

Drain to Source Voltage

600

V

4.0*

A

2.2*

A

Drain current pulsed

(note 1)

16

A

Gate to Source Voltage

±

30

V

Single pulsed Avalanche Energy

(note 2)

342

mJ

Repetitive Avalanche Energy

(note 1)

32

mJ

dv/dt

Peak diode Recovery dv/dt

(note 3)

4.5

V/ns

270

W

2.16

Operating Junction Temperature & Storage Temperature

-55 ~ + 150

Maximum Lead Temperature for soldering

purpose, 1/8 from Case for 5 seconds.

300

Thermal characteristics

Symbol

Parameter

Value

Unit

Thermal resistance, Junction to case

0.46

Thermal resistance, Junction to ambient

80

: 4.0A

1

2

3

1. Gate 2. Drain 3. Source

1

2

3

IPAK

SW226NV

SW226NV

Item

Sales Type

Marking

Package

Packaging

1

SW I 226NV

SW226NV

IPAK

TUBE

2

SW D 226NV

SW226NV

DPAK

REEL

Order Codes

DPAK

1

2

3

*. Drain current is limited by junction temperature.