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SW630A Datasheet(PDF) 1 Page - Xian Semipower Electronic Technology Co., Ltd. |
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SW630A Datasheet(HTML) 1 Page - Xian Semipower Electronic Technology Co., Ltd. |
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1 / 5 page  Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. July. 2013. Rev. 3.0 1/5 Features ■ High ruggedness ■ R DS(ON) (Max 0.4 Ω)@V GS=10V ■ Gate Charge (Typ 22nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and SMPS. It’s typical application is TV and monitor. N-channel TO-220/D-PAK MOSFET Absolute maximum ratings Symbol Parameter Value Unit TO-220 TO-252 VDSS Drain to Source Voltage 200 V ID Continuous Drain Current (@TC=25oC) 10* A Continuous Drain Current (@TC=100oC) 6.3* A IDM Drain current pulsed (note 1) 40 A VGS Gate to Source Voltage ±30 V EAS Single pulsed Avalanche Energy (note 2) 600 mJ EAR Repetitive Avalanche Energy (note 1) 120 mJ dv/dt Peak diode Recovery dv/dt (note 3) 5 V/ns PD Total power dissipation (@TC=25oC) 132 148 W Derating Factor above 25oC 1.06 1.18 W/oC TSTG, TJ Operating Junction Temperature & Storage Temperature -55 ~ + 150 oC TL Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. 300 oC Thermal characteristics Symbol Parameter Value Unit TO-220 TO-252 Rthjc Thermal resistance, Junction to case 0.95 0.85 oC/W Rthcs Thermal resistance, Case to Sink 0.5 - oC/W Rthja Thermal resistance, Junction to ambient 57.5 - oC/W *. Drain current is limited by junction temperature. BV DSS : 200V I D : 10A R DS(ON) : 0.4ohm 1. Gate 2. Drain 3. Source 1 2 3 1 2 3 TO-220 SW630A SAMWIN Order Codes 2 3 1 TO-252 Item Sales Type Marking Package Packaging 1 SW P 630A SW630 TO-220 TUBE 2 SW D 630A SW630 TO-252 REEL |
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