SSFD3004

ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)

Parameter

Symbol

Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BV

V =0V I

DSS

GS

30

V

Zero Gate Voltage Drain Current

I

V =30V,V =0V

1

μA

DSS

DS

GS

Gate-Body Leakage Current

I

V =±20V,V =0V

±100

nA

GSS

GS

DS

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

V

V =V

GS(th)

DS

1

1.8

2.5

V

V =4.5V, I

GS

7.5

9.5

mΩ

Drain-Source On-State Resistance

V =10V, I

GS

4.4

5.5

mΩ

Forward Transconductance

g

V =5V,I

FS

DS

25

S

DYNAMIC CHARACTERISTICS (Note4)

Input Capacitance

C

1800

PF

lss

Output Capacitance

450

PF

V =15V,V

Reverse Transfer Capacitance

DS

F=1.0MHz

300

PF

SWITCHING CHARACTERISTICS (Note 4)

Turn-on Delay Time

t

8

nS

d(on)

Turn-on Rise Time

t

10

nS

r

Turn-Off Delay Time

30

nS

V =15V,V =10V,R

Turn-Off Fall Time

DS

GS

9

nS

Total Gate Charge

Q

30

nC

g

Gate-Source Charge

5

nC

V =15V,I

Gate-Drain Charge

DS

9

nC

DRAIN-SOURCE DIODE CHARACTERISTICS

Diode Forward Voltage (Note 3)

V

V =0V,I =1A

0.7

1.2

V

SD

GS

S

NOTES:

1.

Repetitive Rating: Pulse width limited by maximum junction temperature.

2.

3.

Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4.

Guaranteed by design, not subject to production testing.

5. Limited by TJmax, starting TJ = 25°C, L = 0.3mH RG =50Ω, IAS = 50A, VGS =10V. Part not recommended for use above this value

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