SSFT4002

2010.09.03

Version : 1.1(preliminary)

page

2of6

www.silikron.com

Parameter

Min.

Typ.

Max

Units

Conditions

BVDSS

Drain-to-Source breakdown voltage

40

—

—

V

VGS = 0V, ID = 250μA

RDS(on)

Static Drain-to-Source on-resistance

—

2.1

2.5

mΩ

VGS = 10V, ID = 30A③

VGS(th)

Gate threshold voltage

2

—

4

V

VDS = VGS, ID = 250μA

IDSS

Drain-to-Source leakage current

—

—

10

μA

VDS = 40V, VGS = 0V

—

—

150

VDS = 40V, VGS = 0V, TJ =

125°C

IGSS

Gate-to-Source forward leakage

—

—

100

nA

VGS = 24V

Gate-to-Source reverse leakage

—

—

-100

VGS = -24V

Qg

Total gate charge

—

220

—

nC

ID = 75A VDS = 32V VGS =

10V③

Qgs

Gate-to-Source charge

—

56

—

Qgd

Gate-to-Drain("Miller") charge

—

56

—

td(on)

Turn-on delay time

—

33

—

ns

VDD = 20V ID = 75A RG = 3.0

Ω VGS = 10V③

tr

Rise time

—

133

—

td(off)

Turn-Off delay time

—

120

—

tf

Fall time

—

80

—

Ciss

Input capacitance

—

15300

—

pF

VGS = 0V VDS = 25V ƒ =

1.0MHz

Coss

Output capacitance

—

1290

—

Crss

Reverse transfer capacitance

—

306

—

Source-Drain Ratings and Characteristics

Parameter

Min.

Typ.

Max

Units

Conditions

IS

Continuous

Source

Current

(Body Diode)

—

—

75

A

MOSFET symbol

showing the

integral reverse

p-n junction diode.

ISM

Pulsed

Source

Current (Body

Diode)

①

—

—

750

TJ = 25°C, IS = 75A, VGS = 0V③

VSD

Diode Forward

Voltage

—

0.85

1.3

V

TJ = 25°C, IF = 75A, VDD = 20V di/dt = 100A/μs③

trr

Reverse Recovery

Time

—

37

45

ns

TJ = 25°C, IF = 65A, VDD = 20V

di/dt = 100A/μs③

Qrr

Reverse Recovery

Charge

—

36

55

nC

ton

Forward Turn-on

Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)