©

1995

DATA SHEET

HETERO JUNCTION FIELD EFFECT TRANSISTOR

NE33284A

L to X BAND SUPER LOW NOISE AMPLIFIER

N-CHANNEL HJ-FET

DESCRIPTION

The NE33284A is a Herero Junction FET that utilizes the

hetero junction to create high mobility electrons. Its excellent

low noise and high associated gain make it suitable for GPS,

TVRO and another commercial systems.

FEATURES

•

Super Low Noise Figure & High Associated Gain

•

µm

ORDERING INFORMATION

PART NUMBER

SUPPLYING

LEAD LENGTH

FORM

NE33284A-SL

STICK

L = 1.7 mm MIN.

NE33284A-T1

Tape & reel

L = 1.0

±0.2 mm

NE33284A-T1A

Drain to Source Voltage

4.0

V

Gate to Source Voltage

–3.0

V

Drain Current

mA

Total Power Dissipation

165

mW

Channel Temperature

150

˚ C

Storage Temperature

–65 to +150

˚ C

CHARACTERISTIC

SYMBOL

MIN.

TYP.

MAX.

Unit

Drain to Source Voltage

23

V

Drain Current

10

20

mA

Input Power

0

dBm

Document No. P10874EJ2V0DS00 (2nd edition)

(Previous No. TD-2369)

Date Published October 1995 P

Printed in Japan

PACKAGE DIMENSIONS

(Unit: mm)

1.78 ±0.2

1

L

L

4

2

L

L

3

0.5 TYP.

U

1. Source

2. Drain

3. Source

4. Gate