2

HV823

Absolute Maximum Ratings

Ordering Information

-G indicates the package is RoHS compliant - “Green”

Device

8-Lead SOIC

4.90x3.90mm body

1.75mm height (max)

1.27mm pitch

HV823

HV823LG-G

Parameter

Value

Supply voltage, V

DD

-0.5 to +10V

Output voltage, V

CS

-0.5 to +120V

Power dissipation

400mW

Storage temperature

Operating temperature

Stresses beyond those listed under “Absolute Maximum Ratings” may cause

permanent damage to the device. These are stress ratings only, and functional

operation of the device at these or any other conditions beyond those indicated in

the operational sections of the specifications is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect device reliability. All

voltages referenced to ground.

Note: All voltages referenced to GND.

Recommended Operating Conditions

Sym

Parameter

Min

Typ

Max

Unit

Conditions

V

DD

Supply voltage

2.0

-

9.5

V

---

T

A

Operating temperature

-25

-

+85

O

C

---

Sym

Parameter

Min

Typ

Max

Unit

Conditions

R

DS(ON)

On resistance of switching transistor

-

2.0

6.0

Ω

I = 100mA

V

CS

Output voltage V

80

90

100

V

V

V

Output peak-to-peak voltage

160

180

200

V

V

I

DDQ

Quiescent V

-

30

100

nA

R

I

DD

V

-

150

200

µA

V

-

-

300

µA

V

-

-

500

µA

V

I

IN

Input current including inductor current

-

25

33

mA

V

V

CS

Output voltage on V

CS

60

70

85

V

V

f

EL

V

330

380

450

Hz

V

f

SW

Inductor switching frequency

50

60

70

KHz

V

D

Switching transistor duty cycle

-

88

-

%

---

Pin Configuration

1

2

3

4

8

7

6

5

VDD

RSW-Osc

CS

LX

8-Lead SOIC

(top view)

REL-Osc

VA

VB

GND

Product Marking

Y = Last Digit of Year Sealed

WW = Week Sealed

L = Lot Number

= “Green” Packaging

YWW

HV823

LLLL

8-Lead SOIC (LG)

8-Lead SOIC (LG)

(top view)

Package may or may not include the following marks: Si or