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HETERO JUNCTION FIELD EFFECT TRANSISTOR

NE429M01

C to Ku BAND SUPER LOW NOISE AMPLIFIER

N-CHANNEL HJ-FET

Document No. P12254EJ3V0DS00 (3rd edition)

Date Published November 1999 N CP(K)

Printed in Japan

DATA SHEET

©

1997, 1999

The mark

shows major revised points.

DESCRIPTION

The NE429M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its

excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems.

FEATURES

•

Super low noise figure & High associated gain

•

6-pin super minimold package

•

µm

ORDERING INFORMATION

Part Number

Package

Marking

Supplying Form

NE429M01-T1

6-pin super minimold

V72

Embossed tape 8 mm wide.

1, 2, 3 pins face to perforation side of the tape

Qty 3 kpcs/reel

°°°°C)

Parameter

Symbol

Ratings

Unit

Drain to Source Voltage

4.0

V

Gate to Source Voltage

−3.0

V

Drain Current

mA

Gate Current

100

µA

Total Power Dissipation

125

mW

Channel Temperature

125

°C

Storage Temperature

−65 to +125

°C