Preliminary Data Sheet P14387EJ1V0DS00

2

NE960R5 SERIES

°°°°C)

Operation in excess of any one of these parameters may result in permanent damage.

Parameter

Symbol

Ratings

Unit

Drain to Source Voltage

15

V

Gate to Source Voltage

–7 (

V

Drain Current

0.7

A

Gate Forward Current

+5.0

mA

Gate Reverse Current

–5.0

mA

Total Power Dissipation

5.0 (4.2

W

Channel Temperature

175

°C

Storage Temperature

–65 to +175

°C

Notes 1. NE962R575

2. NE961R500

RECOMMENDED OPERATING CONDITIONS

Parameter

Symbol

Test Condition

MIN.

TYP.

MAX.

Unit

Drain to Source Voltage

−

9.0

9.0

V

Gain Compression

Gcomp

−−

3.0

dB

Channel Temperature

−−

+130

°C

ELECTRICAL CHARACTERISTICS

°°°°C, unless otherwise specified, using NEC standard test fixture.)

Parameter

Symbol

Test Conditions

MIN.

TYP.

MAX.

Unit

Saturated Drain Current

0.18

0.4

0.7

A

Pinch-off Voltage

–2.5

–1.8

–0.5

V

Gate to Drain Break Down Voltage

Note 1

15

−−

V

Gate to Source Break Down

Voltage

Note 2

9.0

−−

V

Thermal Resistance

Channel to Case

−−

30 (35

°C/W

25.5

26.5

−

dBm

Output Power at 1 dB Gain

Compression Point

Note 1

−

27.5

−

dBm

Note 1

−

30

−

%

Linear Gain

Note 1

Ω

8.0

9.0

−

dB

Notes 1. Except NE962R575

2. NE962R575 only

3. NE961R500

Remark DC and RF performance is 100 % testing.