©

1996

PRELIMINARY DATA SHEET

GaAs MES FET

NE85001 SERIES

1 W C-BAND POWER GaAs FET

N-CHANNEL GaAs MES FET

Document No. P10968EJ1V0DS00 (1st edition)

Date Published June 1996 P

Printed in Japan

DESCRIPTION

The NE8500199 Power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator

applications and so on.

NE8500100 is the two-cells recessed gate chip used in ‘99’ package.

The device incorporates Ti-Al gate and silicon dioxide glassivation. To reduce the thermal resistance, the device

has a PHS. (Plated Heat Sink)

NEC’s strigent quality assurance and test procedures assure the highest reliability and performance.

FEATURES

•

Class A operation

•

High power output

•

High reliability

SELECTION CHART

PERFORMANCE SPECIFIED

PART NUMBER

FORM

USABLE

(dBm)

(dB)

FREQUENCY

(GHz)

NE8500100(*)

chip

28.5 min

9.0 typ

2.0 to 10

NE8500100-WB

NE8500100-RG

NE8500199

package

28.5 min

9.0 typ

2.0 to 10

*

WB, RG indicate a type of containers for chips.

WB: black carrier, RG: ring,: gel-pack,

** Specified at the condition at the last page.

PHYSICAL DIMENSIONS

NE8500100 (CHIP) (unit:

µm)

PACKAGE CODE-99 (unit: mm)

4.0 MIN BOTH LEADS

SOURCE

GATE

DRAIN

0.6 ±0.1

5.2 ±0.3

6.0 ±0.2

11.0 ±0.3

15.0 ±0.3

0.1

1.2

0.2 MAX.

1.0 ±0.1

2.2 ±0.3

2 PLACES

φ

4.3 ±0.2

1.7 ±0.15

4.0

5.0 MAX.

780

640

170

100

146

100

65

100