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HSB124 Datasheet(PDF) 2 Page - Hitachi Semiconductor |
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HSB124 Datasheet(HTML) 2 Page - Hitachi Semiconductor |
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2 / 5 page ![]() HSB124S 2 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Value Unit Peak reverse voltage V RM 85 V Reverse voltage V R 80 V Peak forward current I FM *1 300 mA Non-Repetitive peak forward surge current I FSM *2 4A Average rectified current I O *1 100 mA Junction temperature Tj 125 °C Storage temperature Tstg -55 to +125 °C Note: 1. Two device total. Note: 2. Value at duration of 1 µsec, two device total. Electrical Characteristics (Ta = 25 °C) *1 Item Symbol Min Typ Max Unit Test Condition Forward voltage V F — — 1.2 V I F = 100 mA Reverse current I R — — 0.01 µAV R = 80V Capacitance C — — 4.0 pF V R = 0V, f = 1 MHz Reverse recovery time t rr — — 100 ns I F = 10 mA, VR = 6V, RL = 50Ω Note: 1. Per one device. |
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