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HSC276 Datasheet(PDF) 2 Page - Hitachi Semiconductor |
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HSC276 Datasheet(HTML) 2 Page - Hitachi Semiconductor |
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2 / 5 page ![]() HSC276 2 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Value Unit Reverse voltage V R 3V Average rectified current I O 30 mA Junction temperature Tj 125 °C Storage temperature Tstg -55 to +125 °C Electrical Characteristics (Ta = 25 °C) Item Symbol Min Typ Max Unit Test Condition Reverse voltage V R 3— — V I R = 1 mA Reverse current I R —— 50 µAV R = 0.5V Forward current I F 35 — — mA V F = 0.5V Capacitance C — — 0.85 pF V R = 0.5V, f = 1 MHz ESD-Capability *1 — 30 — — V C=200pF , Both forward and reverse direction 1 pulse. Notes 1. Failure criterion ; IR ≥ 100µA at VR =0.5 V |
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