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HVC134 Datasheet(PDF) 2 Page - Hitachi Semiconductor |
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HVC134 Datasheet(HTML) 2 Page - Hitachi Semiconductor |
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2 / 6 page ![]() HVC134 2 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Value Unit Peak reverse voltage V RM 65 V Reverse voltage V R 60 V Forward current I F 100 mA Power dissipation P d 150 mW Junction temperature Tj 125 °C Storage temperature Tstg -55 to +125 °C Electrical Characteristics (Ta = 25 °C) Item Symbol Min Typ Max Unit Test Condition Reverse current I R — — 0.1 µAV R = 60V Forward voltage V F — — 1.0 V I F = 10 mA Capacitance C — — 0.4 pF V R = 1V, f = 1 MHz Forward resistance r f — — 2.0 Ω I F = 10 mA, f = 100 MHz ESD-Capability *1 — 200 — — V C =100pF, R = 1.5K Ω, Both forward and reverse direction 5 pulse Notes 1. Failure criterion ; I R > 0.1 µA at VR = 60V. |
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