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HVM187 Datasheet(PDF) 2 Page - Hitachi Semiconductor |
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HVM187 Datasheet(HTML) 2 Page - Hitachi Semiconductor |
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2 / 6 page ![]() HVM187S 2 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Reverse voltage V R 60 V Forward current I F 50 mA Power dissipation Pd* 100 mW Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Note: Per one device Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Condition Forward voltage V F — — 1.0 V I F = 10mA Reverse current I R — — 100 nA V R = 60V Capacitance C — — 2.4 pF V R = 0V, f = 1MHz Forward resistance r f 3.5 — 5.5 Ω I F = 10mA, f = 100MHz ESD-Capability — 200 — — V *C = 200pF, Both forward and reverse direction 1 pulse. Note: Failure criterion; I R ≥ 100nA at VR = 60V 0 0.2 0.4 0.6 0.8 1.0 10 10 –6 10 –8 10 –10 10 –12 Forward voltage V (V) F 10 –2 –4 Fig.1 Forward current Vs. Forward voltage |
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