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PD55008S Datasheet(PDF) 1 Page - STMicroelectronics

Part # PD55008S
Description  RF POWER TRANSISTORS The LdmoST Plastic FAMILY
PDF  18 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

PD55008S Datasheet(HTML) 1 Page - STMicroelectronics

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March, 21 2003
PD55008
PD55008S
RF POWER TRANSISTORS
The LdmoST Plastic FAMILY
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• POUT = 8 W with 17 dB gain @ 500 MHz / 12.5V
• NEW RF PLASTIC PACKAGE
DESCRIPTION
The PD55008 is a common source N-Channel, en-
hancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 12 V in common source mode at frequencies up
to 1 GHz.
PD55008 boasts the excellent gain, linearity and
reliability of ST’s latest LDMOS technology mount-
ed in the first true SMD plastic RF power package,
PowerSO-10RF. PD55008’s superior linearity per-
formance makes it an ideal solution for car mobile
radio.
The PowerSO-10 plastic package, designed to of-
fer high reliability, is the first ST JEDEC approved,
high power SMD package. It has been specially
optimized for RF needs and offers excellent RF
performances and ease of assembly.
PowerSO-10RF
(formed lead)
ORDER CODE
PD55008
BRANDING
PD55008
PowerSO-10RF
(straight lead)
ORDER CODE
PD55008S
BRANDING
PD55008S
ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C)
Symbol
Parameter
Value
Unit
V(BR)DSS
Drain-Source Voltage
40
V
VGS
Gate-Source Voltage
± 20
V
ID
Drain Current
4
A
PDISS
Power Dissipation (@ Tc = 70°C)
52.8
W
Tj
Max. Operating Junction Temperature
165
°C
TSTG
Storage Temperature
-65 to +150
°C
THERMAL DATA
Rth(j-c)
Junction -Case Thermal Resistance
1.8
°C/W
Mounting recommendations are available in
www.st.com/rf/ (look for application note AN1294)


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