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STI45N10F7 Datasheet(PDF) 1 Page - STMicroelectronics |
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STI45N10F7 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 19 page ![]() This is information on a product in full production. October 2013 DocID024455 Rev 1 1/19 STD45N10F7, STI45N10F7, STP45N10F7 N-channel 100 V, 0.0145 Ω typ., 45 A, STripFET™ VII DeepGATE™ Power MOSFETs in DPAK, I2PAK and TO-220 packages Datasheet - production data Figure 1. Internal schematic diagram Features • Ultra low on-resistance • 100% avalanche tested Applications • Switching applications Description These devices utilize the 7th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 1 2 3 TAB 1 2 3 TAB DPAK 1 3 TAB TO-220 I PAK 2 Order codes VDS RDS(on) max.(1) 1. @ VGS = 10 V ID PTOT STD45N10F7 100 V 0.018 Ω 45 A 60 W STI45N10F7 STP45N10F7 Table 1. Device summary Order codes Marking Package Packaging STD45N10F7 45N10F7 DPAK Tape and reel STI45N10F7 I2PAK Tube STP45N10F7 TO-220 www.st.com |
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